High Energy Electron Dispersion, Physics, and Technology,” is an outgrowth of work he has been pursuing for some 15 years in ...

Texas Instruments (TI) announced that it has begun production of gallium nitride (GaN)-based power semiconductors at its ...

V GaN InnoMux-2 IC delivers efficiency of better than 90% from a 1000 VDC bus, supplying up to 70 W from three accurately ...

Radu Barsan, vice president of technology at Power Integrations, said, “Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 ...

Next-generation solution achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale ...

Focused on the defense industry, Plano-based ENGIN-IC is a fabless semiconductor company that designs advanced Gallium ...

Infineon Technologies AG has progressed in its development of what it claims is the first 300 mm gallium nitride (GaN) power ...

A fabless semiconductor company, ENGIN-IC designs advanced Gallium Nitride (GaN) monolithic microwave integrated circuits (MMICs) and integrated microwave assemblies and is located in Plano, Texas and ...

The new device features the industry’s first 1700 V gallium nitride switch, fabricated using the company’s proprietary PowiGaN™ technology. The 1700 V rating further advances the state-of ...

1700 V GaN InnoMux-2 IC delivers efficiency of better than 90 percent from a 1000 VDC bus, supplying up to 70 W from three accurately regulated outputs Subhead of release should read: 1700 V GaN ...